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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N04MUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP90N04MUG-S18-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
TO-220 (MP-25K) typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
? Super low on-state resistance
R DS(on) = 3.0 m Ω MAX. (V GS = 10 V, I D = 45 A)
? Channel temperature 175 degree rated
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-220)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
40
± 20
± 90
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 360
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
217
1.8
175
? 55 to + 175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
60
360
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150 ° C, V DD = 20 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
0.69
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18665EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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